Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1

IPD60R280P7ATMA1 Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon
Infineon

Product Information

Maximum Drain Source Voltage:
650 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Series:
CoolMOS
Channel Type:
N
Maximum Gate Threshold Voltage:
4V
Maximum Drain Source Resistance:
0.28 Ω
Package Type:
TO-252
Number of Elements per Chip:
1
Maximum Continuous Drain Current:
12 A
Transistor Material:
Silicon
Pin Count:
3
RoHs Compliant
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This is Silicon N-Channel MOSFET 12 A 650 V 3-Pin PG-TO252-3 manufactured by Infineon. The manufacturer part number is IPD60R280P7ATMA1. The product is available in surface mount configuration. The product coolmos, is a highly preferred choice for users. The product is available in [Cannel Type] channel.

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Datasheet - IPD60R280P7ATMA1(Technical Reference)

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You will get a confirmation email regarding your order of Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1. You can also check on our website or by contacting our customer support team for further order details on Silicon N-Channel MOSFET, 12 A, 650 V, 3-Pin PG-TO252-3 Infineon IPD60R280P7ATMA1.
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