Infineon IRF2807ZPBF N-channel MOSFET, 89 A, 75 V HEXFET, 3-Pin TO-220AB

IRF2807ZPBF Infineon  N-channel MOSFET, 89 A, 75 V HEXFET, 3-Pin TO-220AB
IRF2807ZPBF
Infineon

Product Information

Maximum Continuous Drain Current:
89 A
Transistor Material:
Si
Width:
4.83mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
75 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
71 nC @ 10 V
Channel Type:
N
Length:
10.67mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
170 W
Series:
HEXFET
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
16.51mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.4 mΩ
RoHs Compliant
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This is N-channel MOSFET 89 A 75 V HEXFET 3-Pin TO-220AB manufactured by Infineon. The manufacturer part number is IRF2807ZPBF. Furthermore, the product is 4.83mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.67mm. The product is available in through hole configuration. The product hexfet, is a highly preferred choice for users. In addition, the height is 16.51mm. Whereas, the minimum operating temperature of the product is -55 °c.

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IRF2807ZPbF, IRF2807ZSPbF, IRF2807ZLPbF,HEXFET Power MOSFET(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)

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